![]() Additionally, DFT calculations were used to obtain some insights about the interaction of the FePc with the diamond surface. Nitrogen and Phosphorus are suitable N-type dopants for diamond. Their structures, dynamic conformational behaviors, and photophysical properties, including solid-state fluorescence, were disclosed. Group VA elements are donors, N-type dopants, yielding a free electron. Boron difluoride complexes of phenothiazine, 9,10-dihydroacridine, and acridone derivatives with a pyridyl group were synthesized. Indium is the P-type dopant for germanium. It is a metalloid and occurs in meteoroids in trace amounts. The different electrocatalytic performance observed confirmed the strong influence of the surface chemistry of the BDDP supports on the activity of the metallic sites for FePc samples while, for Fe-C 3N 4 samples, the determining effect was the particle size of the BDDP support. Boron is the P-type dopant for the diamond and the most common dopant for silicon semiconductors. Boron is a group 13th element which is denoted by the chemical symbol B. BDDP supports were modified with carbon nitride (C 3N 4) or phthalocyanines (Pc) as anchoring points for iron. In this work, we present three BDDP supports with different particle sizes and different surface oxygen contents as supports of different iron species for oxygen reduction reaction in alkaline solution. These materials have been proposed as alternative cathode catalyst support due to their high corrosion resistance when subjected to the highly positive potentials originated during the start-stop operations in fuel cells, especially in automobiles. The interest for the electrodes based on conductive boron-doped diamond powder (BDDP) is increasing in recent years due to their excellent physical and chemical stability, the wide potential window in both aqueous and organic electrolytes, the relatively large specific surface area, and their versatility in comparison to boron-doped diamond thin film electrodes.
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